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| 2N5038 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N5038J) * JANTX level (2N5038JX) * JANTXV level (2N5038JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Applications * High-speed power-switching * High power * NPN silicon transistor Features * * * * Hermetically sealed TO-3 metal can Also available in chip configuration Chip geometry 9351 Reference document: MIL-PRF-19500/439 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available TC = 25C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 90 150 7 20 140 800 1.25 -65 to +200 -65 to +200 Unit Volts Volts Volts A W mW/C C/W C C RJA TJ TSTG Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5038 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBE VBEsat VCEsat1 VCEsat2 Test Conditions IC = 0.5 A, VCE = 5 Volts IC = 2 A, VCE = 5 Volts IC = 12 A, VCE = 5 Volts IC = 12 A, VCE = 5 Volts TA = -55C VCE = 5 Volts, IC = 12 A IC = 20 A, IB = 5 A IC = 12 A, IB = 1.2 A IC = 20 A, IB = 5 A Symbol V(BR)CEO V(BR)EBO ICBO1 ICEO ICEX1 ICEX2 IEBO Test Conditions IC = 200 mA IE = 25 mA VCB = 150 Volts VCE = 70 Volts VCE =100Volts, VEB =1.5Volts VCE =100Volts, VEB=1.5Volts, TA = 150C VEB = 5 Volts Min 90 7 1 1 5 100 1 Typ Max Units Volts Volts A A A A Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Min 50 50 15 10 Typ Max 200 Units Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time 1.8 3.3 1.0 2.5 Volts Volts Volts Symbol |hFE| COBO Test Conditions VCE = 10 Volts, IC = 2 A, f = 5 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz IC = 12 A, IB1 = 1.2 A IC = 12 A, IB1 = -IB2 = 1.2 A Min 12 Typ Max 48 500 Units pF tON tOFF 0.5 2.0 s s Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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